Images are for reference only.Please communicate with sales for
detailed product
parameters
SMMUN2114LT1G
Transistors (BJT) - Single, Pre - Biased
- Manufacturer No:
- SMMUN2114LT1G
- Manufacture:
- ON Semiconductor
- Datasheet:
- SMMUN2114LT1G
- Description:
- TRANS PREBIAS PNP 0.246W SOT23
In Stock
3000 pcs On sales
Purchase and inquiry
Purchase
You may place an order without registering to Micro Mall.
We strongly suggest you sign in before purchasing as you can track your order in real time.
Means of Payment
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.RFQ (Request for Quotations)
It is recommended to request for quotations to get the latest prices and inventories about the part. Our sales will reply to your request by email within 24 hours.IMPORTANT NOTICE
1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.
Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.) The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.Shipping Method
Currently, our products are shipped through DHL, FedEx, SF, and UPS.Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
ON Semiconductor SMMUN2114LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor SMMUN2114LT1G.
- Categories
- Discrete Semiconductor Products
- Manufacturer
- ON Semiconductor
- Packaging
- Reel - TR
- Status
- Active
- Transistor Polarity
- PNP - Pre-Biased
- Maximum Current Collector
- 100mA
- VCEO Maximum Collector-Emitter Breakdown Voltage
- 50V
- Resistor - Base (R1) (Ohms)
- 10k
- Resistor - Emitter Base (R2) (Ohms)
- 47k
- Typical Gain (hFE) (Min)
- 80 @ 5mA, 10V
- Max Vce (sat)
- 250mV @ 300μA, 10mA
- Collector Cut-off Current(Max)
- 500nA
- Maximum Power Dissipation
- 246mW
- Mounting
- SMD (SMT)
- Case / Package
- SOT-23-3 (TO-236)
- Popularity
- Medium
- Fake Threat In the Open Market
- 47 pct.
- Supply and Demand Status
- Balance
Company Profile
SMMUN2114LT1G Relevant information
SMMUN2111LT1G
Digital Transistors (BRT) R1 = 10 k, R2 = 10 k | TRANS PREBIAS PNP 0.246W SOT23
SMMUN2111LT3G
TRANS PREBIAS PNP 50V SOT23-3 / Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)
SMMUN2113LT1G
TRANS PREBIAS PNP 50V SOT23-3 / Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)
SMMUN2114LT1G
TRANS PREBIAS PNP 0.246W SOT23
SMMUN2116LT1G
TRANS PREBIAS PNP 50V SOT23-3 / Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)