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SMMUN2134LT1G

Transistors (BJT) - Single, Pre - Biased

Manufacturer No:
SMMUN2134LT1G
Manufacture:
ON Semiconductor
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
SMMUN2134LT1G

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Product Attribute

ON Semiconductor SMMUN2134LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor SMMUN2134LT1G.

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr
onsemi
Package
Tape & Reel
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
22 kOhms
Resistor - Emitter Base (R2)
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)
500nA
Power - Max
246 mW
Mounting
SMD (SMT)
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)
Base Product Number
SMMUN2134
Other Names
SMMUN2134LT1G,2156-SMMUN2134LT1G-OS,SMMUN2134LT1GOSDKR,SMMUN2134LT1GOSCT,SMMUN2134LT1GOSTR,ONSONSSMMUN2134LT1G
Standard Package
3,000
MSL Level
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Fake Threat In the Open Market
82 pct.

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