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SMUN2111T1G

Transistors (BJT) - Single, Pre - Biased

Manufacturer No:
SMUN2111T1G
Manufacture:
ON Semiconductor
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
SMUN2111T1G

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Product Attribute

ON Semiconductor SMUN2111T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor SMUN2111T1G.

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr
onsemi
Series
Automotive, AEC-Q101
Package
Tape & Reel
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
10 kOhms
Resistor - Emitter Base (R2)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)
500nA
Power - Max
230 mW
Mounting
SMD (SMT)
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SC-59
Base Product Number
SMUN2111
Other Names
SMUN2111T1GOSCT,2156-SMUN2111T1G-OS,SMUN2111T1GOSTR,SMUN2111T1G,SMUN2111T1GOSDKR,ONSONSSMUN2111T1G
Standard Package
30,000
MSL Level
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Fake Threat In the Open Market
60 pct.

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