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SMUN5235DW1T3G

Transistors (BJT) - Arrays, Pre - Biased

Manufacturer No:
SMUN5235DW1T3G
Manufacture:
ON Semiconductor
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
SMUN5235DW1T3G

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Product Attribute

ON Semiconductor SMUN5235DW1T3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor SMUN5235DW1T3G.

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr
onsemi
Package
Tape & Reel (TR)
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
2.2kOhms
Resistor - Emitter Base (R2)
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)
500nA
Power - Max
187mW
Mounting
SMD (SMT)
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SC-88/SC70-6/SOT-363
Base Product Number
SMUN5235
Standard Package
10,000
MSL Level
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Fake Threat In the Open Market
57 pct.

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