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DME914C10R

Transistors (BJT) - Arrays, Pre - Biased

Manufacturer No:
DME914C10R
Manufacture:
Panasonic
Datasheet:
DME914C10R
Description:
TRANS NPN PREBIAS/PNP SSMINI6

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0 pcs On sales

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Product Attribute

Panasonic DME914C10R technical specifications, attributes, parameters and parts with similar specifications to Panasonic DME914C10R.

Categories
Discrete Semiconductor Products
Manufacturer
Panasonic Electronic Components
Packaging
Reel - TR
Status
Active
Transistor Polarity
1 NPN Pre-Biased, 1 PNP
Maximum Current Collector
100mA, 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage
50V, 12V
Resistor - Base (R1) (Ohms)
4.7k
Resistor - Emitter Base (R2) (Ohms)
47k
Typical Gain (hFE) (Min)
80 @ 5mA, 10V / 270 @ 10mA, 2V
Max Vce (sat)
250mV @ 500μA, 10mA / 250mV @ 10mA, 200mA
Collector Cut-off Current(Max)
500nA
Frequency - Transition
300MHz
Maximum Power Dissipation
125mW
Mounting
SMD (SMT)
Case / Package
SSMini6-F3-B
Popularity
Medium
Fake Threat In the Open Market
55 pct.
Supply and Demand Status
Balance

Company Profile

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DME914C10R Relevant information

DME914C10R
DME914C10R

TRANS NPN PREBIAS/PNP SSMINI6

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