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DRA2114Y0L

RF Transistors (BJT)

Manufacturer No:
DRA2114Y0L
Manufacture:
Panasonic
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
DRA2114Y0L
Description:
TRANS PREBIAS PNP 200MW MINI3 / Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 mW Surface Mount MINI3-G3-B

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Shipping Cost
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Shipping Method
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Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Panasonic DRA2114Y0L technical specifications, attributes, parameters and parts with similar specifications to Panasonic DRA2114Y0L.

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr
Panasonic Electronic Components
Package
Tape & Reel
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
10 kOhms
Resistor - Emitter Base (R2)
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
500nA
Power - Max
200 mW
Mounting
SMD (SMT)
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
Mini3-G3-B
Base Product Number
DRA2114
MSL Level
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
DRA2114Y0LTR,DRA2114Y0LDKR,DRA2114Y0LCT,DRA2114Y0L-ND
Standard Package
3,000
Fake Threat In the Open Market
83 pct.

Company Profile

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