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PJD5NA80_L2_00001

Transistors - FETs, MOSFETs - RF

Manufacturer No:
PJD5NA80_L2_00001
Manufacture:
Panjit
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet:
PJD5NA80_L2_00001
Description:
800V N-CHANNEL MOSFET / N-Channel 800 V 5A (Ta) 140W (Tc) Surface Mount TO-252

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0 pcs On sales

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Shipping Method
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Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Panjit PJD5NA80_L2_00001 technical specifications, attributes, parameters and parts with similar specifications to Panjit PJD5NA80_L2_00001.

Category
Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr
Panjit International Inc.
Package
Tape & Reel
Product Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.7Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
660 pF @ 25 V
Power Dissipation (Max)
140W (Tc)
Temperature Range - Operating
-55°C ~ 150°C (TJ)
Mounting
SMD (SMT)
Supplier Device Package
TO-252
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
MSL Level
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
3757-PJD5NA80_L2_00001TR,3757-PJD5NA80_L2_00001CT,3757-PJD5NA80_L2_00001DKR
Standard Package
3,000
Fake Threat In the Open Market
46 pct.

Company Profile

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PJD5NA80_L2_00001 Relevant information

PJD5NA80_L2_00001
PJD5NA80_L2_00001

800V N-CHANNEL MOSFET / N-Channel 800 V 5A (Ta) 140W (Tc) Surface Mount TO-252

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