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NP35N04YUG-E1-AY

Transistors - FETs, MOSFETs - RF

Manufacturer No:
NP35N04YUG-E1-AY
Manufacture:
Renesas Electronics America
Datasheet:
NP35N04YUG-E1-AY
Description:
MOSFET N-CH 40V 35A 8HSON

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0 pcs On sales

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Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Renesas Electronics America NP35N04YUG-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas Electronics America NP35N04YUG-E1-AY.

Categories
Discrete Semiconductor Products
Manufacturer
Renesas Electronics America
Packaging
Reel - TR
Status
Active
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
40V
Continuous Drain Current at 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate-Source Threshold Voltage
4V @ 250μA
Max Gate Charge
54nC @ 10V
Max Input Capacitance
2850pF @ 25V
Maximum Gate-Source Voltage
±20V
Power Dissipation (Max)
1W (Ta), 77W (Tc)
Maximum Rds On at Id,Vgs
10 mOhm @ 17.5A, 10V
Temperature Range - Operating
175°C (TJ)
Mounting
SMD (SMT)
Case / Package
8-HSON
Dimension
8-SMD, Flat Lead Exposed Pad
Popularity
Medium
Fake Threat In the Open Market
50 pct.
Supply and Demand Status
Balance

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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