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DTA113ZCAT116

RF Transistors (BJT)

Manufacturer No:
DTA113ZCAT116
Manufacture:
Rohm Semiconductor
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
DTA113ZCAT116
Description:
PNP, SOT-23, R1R2 LEAK ABSORPTIO / Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased + Diode 50 V 100 mA 250 MHz 200 mW Surface Mount SST3

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Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Rohm Semiconductor DTA113ZCAT116 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor DTA113ZCAT116.

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr
Rohm Semiconductor
Package
Tape & Reel
Transistor Type
PNP - Pre-Biased + Diode
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
1 kOhms
Resistor - Emitter Base (R2)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
33 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
250 MHz
Power - Max
200 mW
Mounting
SMD (SMT)
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SST3
MSL Level
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
846-DTA113ZCAT116DKR,846-DTA113ZCAT116CT,846-DTA113ZCAT116TR
Standard Package
3,000
Fake Threat In the Open Market
51 pct.

Company Profile

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