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EMD12T2R

Transistors (BJT) - Arrays, Pre - Biased

Manufacturer No:
EMD12T2R
Manufacture:
Rohm Semiconductor
Datasheet:
EMD12T2R
Description:
TRANS NPN/PNP PREBIAS 0.15W EMT6

In Stock

41100 pcs On sales

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Product Attribute

Rohm Semiconductor EMD12T2R technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor EMD12T2R.

Categories
Discrete Semiconductor Products
Manufacturer
Rohm Semiconductor
Packaging
Reel - TR
Status
Active
Transistor Polarity
1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector
100mA
VCEO Maximum Collector-Emitter Breakdown Voltage
50V
Resistor - Base (R1) (Ohms)
47k
Resistor - Emitter Base (R2) (Ohms)
47k
Typical Gain (hFE) (Min)
68 @ 5mA, 5V
Max Vce (sat)
300mV @ 500μA, 10mA
Collector Cut-off Current(Max)
500nA
Frequency - Transition
250MHz
Maximum Power Dissipation
150mW
Mounting
SMD (SMT)
Case / Package
EMT6
Popularity
Medium
Fake Threat In the Open Market
71 pct.
Supply and Demand Status
Sufficient

Company Profile

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EMD12T2R Relevant information

EMD12
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TRANS NPN/PNP PREBIAS 0.15W EMT6

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EMD12FHAT2R

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EMD12T2R
EMD12T2R

TRANS NPN/PNP PREBIAS 0.15W EMT6

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