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IMT3AT108

Transistors (BJT) - Arrays

Manufacturer No:
IMT3AT108
Manufacture:
Rohm Semiconductor
Datasheet:
IMT3AT108
Description:
TRANS 2PNP 50V 0.15A 6SMT

In Stock

11400 pcs On sales

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Product Attribute

Rohm Semiconductor IMT3AT108 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor IMT3AT108.

Categories
Discrete Semiconductor Products
Manufacturer
Rohm Semiconductor
Packaging
Reel - TR
Status
Not For New Designs
Transistor Polarity
2 PNP (Dual)
Maximum Current Collector
150mA
VCEO Maximum Collector-Emitter Breakdown Voltage
50V
Max Vce (sat)
500mV @ 5mA, 50mA
Collector Cut-off Current(Max)
100nA (ICBO)
Typical Gain (hFE) (Min)
120 @ 1mA, 6V
Maximum Power Dissipation
300mW
Frequency - Transition
140MHz
Temperature Range - Operating
150°C (TJ)
Mounting
SMD (SMT)
Case / Package
SMT6
Popularity
Medium
Fake Threat In the Open Market
55 pct.
Supply and Demand Status
Balance

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IMT3AT108 Relevant information

IMT3A
IMT3A

General purpose (dual transistors)

IMT3AT108
IMT3AT108

TRANS 2PNP 50V 0.15A 6SMT

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