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RS1E130GNTB

Name: RS1E130GNTB
Brand: Rohm Semiconductor
Price: 4.07 USD
Rating: 4.8 (6586 reviews)

Transistors - FETs, MOSFETs - RF

Manufacturer No:: RS1E130GNTB
Manufacture:: Rohm Semiconductor
Datasheet:: RS1E130GNTB
Description:: MOSFET N-CH 30V 13A 8-HSOP

In Stock

47200 pcs On sales

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Shipping Cost

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Rohm Semiconductor RS1E130GNTB technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor RS1E130GNTB.

Categories: Discrete Semiconductor Products
Manufacturer: Rohm Semiconductor
Packaging: Reel - TR
Status: Active
Polarity: N-Channel
Technology: MOSFET
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 7.9nC @ 10V
Max Input Capacitance: 420pF @ 15V
Maximum Gate-Source Voltage: ±20V
Power Dissipation (Max): 3W (Ta), 22.2W (Tc)
Maximum Rds On at Id,Vgs: 11.7 mOhm @ 13A, 10V
Temperature Range - Operating: 150°C (TJ)
Mounting: SMD (SMT)
Case / Package: 8-HSOP
Dimension: 8-PowerTDFN
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient

Company Profile

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