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RT1C060UNTR

Transistors - FETs, MOSFETs - RF

Manufacturer No:
RT1C060UNTR
Manufacture:
Rohm Semiconductor
Datasheet:
RT1C060UNTR
Description:
MOSFET N-CH 20V 6A TSST8

In Stock

24000 pcs On sales

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Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Rohm Semiconductor RT1C060UNTR technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor RT1C060UNTR.

Categories
Discrete Semiconductor Products
Manufacturer
Rohm Semiconductor
Packaging
Reel - TR
Status
Active
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
20V
Continuous Drain Current at 25°C
6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Gate-Source Threshold Voltage
1V @ 1mA
Max Gate Charge
11nC @ 4.5V
Max Input Capacitance
870pF @ 10V
Maximum Gate-Source Voltage
±10V
Power Dissipation (Max)
650mW (Ta)
Maximum Rds On at Id,Vgs
28 mOhm @ 6A, 4.5V
Temperature Range - Operating
150°C (TJ)
Mounting
SMD (SMT)
Case / Package
8-TSST
Dimension
8-SMD, Flat Lead
Popularity
Medium
Fake Threat In the Open Market
30 pct.
Supply and Demand Status
Balance

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

RT1C060UNTR Relevant information

RT1C060UN
RT1C060UN

1.5V Drive Nch MOSFET

RT1C060UNTR
RT1C060UNTR

MOSFET N-CH 20V 6A TSST8

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