Images are for reference only.Please communicate with sales for
detailed product
parameters
RUS100N02TB
Transistors - FETs, MOSFETs - RF
- Manufacturer No:
- RUS100N02TB
- Manufacture:
- Rohm Semiconductor
- Datasheet:
- RUS100N02TB
- Description:
- MOSFET N-CH 20V 10A 8SOP
In Stock
51900 pcs On sales
Purchase and inquiry
Purchase
You may place an order without registering to Micro Mall.
We strongly suggest you sign in before purchasing as you can track your order in real time.
Means of Payment
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.RFQ (Request for Quotations)
It is recommended to request for quotations to get the latest prices and inventories about the part. Our sales will reply to your request by email within 24 hours.IMPORTANT NOTICE
1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.
Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.) The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.Shipping Method
Currently, our products are shipped through DHL, FedEx, SF, and UPS.Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
Rohm Semiconductor RUS100N02TB technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor RUS100N02TB.
- Categories
- Discrete Semiconductor Products
- Manufacturer
- Rohm Semiconductor
- Packaging
- Reel - TR
- Status
- Active
- Polarity
- N-Channel
- Technology
- MOSFET
- Drain-Source Breakdown Voltage
- 20V
- Continuous Drain Current at 25°C
- 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)
- 1.5V, 4.5V
- Gate-Source Threshold Voltage
- 1V @ 1mA
- Max Gate Charge
- 24nC @ 4.5V
- Max Input Capacitance
- 2250pF @ 10V
- Maximum Gate-Source Voltage
- ±10V
- Power Dissipation (Max)
- 2W (Ta)
- Maximum Rds On at Id,Vgs
- 12 mOhm @ 10A, 4.5V
- Temperature Range - Operating
- 150°C (TJ)
- Mounting
- SMD (SMT)
- Case / Package
- 8-SOP
- Dimension
- 8-SOIC (0.154", 3.90mm Width)
- Popularity
- Medium
- Fake Threat In the Open Market
- 58 pct.
- Supply and Demand Status
- Sufficient
Company Profile
RUS100N02TB Relevant information
RUS100N02TB
MOSFET N-CH 20V 10A 8SOP
RUS1H20R
Power Schottky Barrier Diode
RUS1H21R
Power Schottky Barrier Diode