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SECOS STT6601 technical specifications, attributes, parameters and parts with similar specifications to SECOS STT6601.
Super high dense cell design for low RDS(ON).
N & P-Channel Enhancement Mode Mos.FET
N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET
P-Channel Enhancement Mode Field Effect Transistor
3.3A , 30V , RDS(ON) 65 m N-Channel Enhancement Mode MOSFET
MOSFET N-CH 30V 6A SOT23-6