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12N60

Transistors - FETs, MOSFETs - RF

Manufacturer No:
12N60
Manufacture:
STMicroelectronics
Datasheet:
12N60
Description:
MOSFET N-CH 600V 9A IPAK

In Stock

23000 pcs On sales

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Product Attribute

STMicroelectronics 12N60 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics 12N60.

Categories
Discrete Semiconductor Products
Manufacturer
STMicroelectronics
Packaging
Tube/Rail
Status
Active
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
600V
Continuous Drain Current at 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate-Source Threshold Voltage
4V @ 250μA
Max Gate Charge
16nC @ 10V
Max Input Capacitance
538pF @ 100V
Maximum Gate-Source Voltage
±25V
Power Dissipation (Max)
85W (Tc)
Maximum Rds On at Id,Vgs
450 mOhm @ 4.5A, 10V
Temperature Range - Operating
-55°C to 150°C (TJ)
Mounting
Through Hole
Case / Package
I-Pak
Dimension
TO-251-3 Short Leads, IPak, TO-251AA
Popularity
Medium
Fake Threat In the Open Market
33 pct.
Supply and Demand Status
Limited

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

12N60 Relevant information

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