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P50NE10

Transistors - FETs, MOSFETs - RF

Manufacturer No:
P50NE10
Manufacture:
STMicroelectronics
Datasheet:
P50NE10
Description:
MOSFET N-CH 100V 50A TO-220

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0 pcs On sales

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Product Attribute

STMicroelectronics P50NE10 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics P50NE10.

Categories
Discrete Semiconductor Products
Manufacturer
STMicroelectronics
Packaging
Tube/Rail
Status
Obsolete(EOL)
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
100V
Continuous Drain Current at 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate-Source Threshold Voltage
4V @ 250μA
Max Gate Charge
166nC @ 10V
Max Input Capacitance
6000pF @ 25V
Maximum Gate-Source Voltage
±20V
Power Dissipation (Max)
180W (Tc)
Maximum Rds On at Id,Vgs
27 mOhm @ 25A, 10V
Temperature Range - Operating
175°C (TJ)
Mounting
Through Hole
Case / Package
TO-220AB
Dimension
TO-220-3
Popularity
Medium
Fake Threat In the Open Market
35 pct.
Supply and Demand Status
Limited

Company Profile

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P50NE10 Relevant information

P50NE10
P50NE10

MOSFET N-CH 100V 50A TO-220

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