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STFI10N65K3
- Manufacturer No:
- STFI10N65K3
- Manufacture:
- STMicroelectronics
- Datasheet:
- STFI10N65K3
- Description:
- N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3 Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages | MOSFET N-CH 650V 10A I2PAKFP
In Stock
6000 pcs On sales
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Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.) The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.Shipping Method
Currently, our products are shipped through DHL, FedEx, SF, and UPS.Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
STMicroelectronics STFI10N65K3 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STFI10N65K3.
- Power Dissipation (Maximum)
- 35W
- Temperature Range - Operating
- -55°C ~ 150°C
- Mounting Style
- Through Hole
- Supplier Device Package
- I2PAKFP (TO-281)
- Manufacturer Package
- TO-262-3 Full Pack, I2Pak
- Manufacturer Pack Quantity
- 50
- MSL Level
- 1 (Unlimited)
- Manufacturer Homepage
- www.st.com
- Popularity
- Medium
- Fake Threat In the Open Market
- 37 pct.
- Supply and Demand Status
- Limited
- Input Capacitance (Ciss) (Maximum) at Vds
- 1180pF at 25V
- Gate Source Voltage (Maximum)
- ±30V
- Gate Charge (Qg) (Maximum) at Vgs
- 42nC at 10V
- Gate Source Voltage(th) (Maximum) at Id
- 4.5V at 100μA
- Rds On (Maximum) at Id, Vgs
- 1Ohm at 3.6A, 10V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Id - Continuous Drain Current
- 10A
- Vds - Drain-Source Breakdown Voltage
- 650V
- Technology
- MOSFET
- Transistor Polarity
- N-Channel
- Status
- Obsolete
- Packaging
- Tube
- Manufacturer
- STMicroelectronics
- Categories
- Discrete Semiconductor Products
Company Profile
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