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STH110N10F7-2

FETs - Single

Manufacturer No:
STH110N10F7-2
Manufacture:
STMicroelectronics
Datasheet:
STH110N10F7-2
Description:
MOSFET N CH 100V 110A H2PAK / High avalanche ruggedness

In Stock

9000 pcs On sales

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Product Attribute

STMicroelectronics STH110N10F7-2 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STH110N10F7-2.

Manufacturer
STMicroelectronics
Packaging
Reel
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) at 25°C
110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Maximum) at Id, Vgs
6.5mOhm at 55A, 10V
Vgs(th) (Maximum) at Id
4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs
72nC at 10V
Maximum Vgs
±20V
Input Capacitance (Ciss) (Maximum) at Vds
5117pF at 50V
Power Dissipation (Maximum)
150W (Tc)
Temperature Range - Operating
-55°C ~ 175°C
Mounting Style
SMD
Supplier Device Package
H2Pak-2
Manufacturer Package
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Part Number Series
STH110
Manufacturer Pack Quantity
1,000
MSL Level
1 (Unlimited)
Popularity
Low
Fake Threat In the Open Market
51 pct.
Supply and Demand Status
Limited

Company Profile

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