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STI23NM60ND

Name: STI23NM60ND
Brand: STMicroelectronics
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

Transistors - FETs, MOSFETs - RF

Manufacturer No:: STI23NM60ND
Manufacture:: STMicroelectronics
Datasheet:: STI23NM60ND
Description:: MOSFET N-CH 600V 19.5A I2PAK

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0 pcs On sales

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Product Attribute

STMicroelectronics STI23NM60ND technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STI23NM60ND.

Categories: Discrete Semiconductor Products
Manufacturer: STMicroelectronics
Packaging: Tube/Rail
Status: Obsolete(EOL)
Polarity: N-Channel
Technology: MOSFET
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 19.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 2050pF @ 50V
Maximum Gate-Source Voltage: ±25V
Power Dissipation (Max): 150W (Tc)
Maximum Rds On at Id,Vgs: 180 mOhm @ 10A, 10V
Temperature Range - Operating: 150°C (TJ)
Mounting: Through Hole
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
Quantity per package: 50

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