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TSM210N06CZ C0G
Transistors - FETs, MOSFETs - RF
- Manufacturer No:
- TSM210N06CZ C0G
- Manufacture:
- Taiwan Semiconductor
- Package:
- TO-220-3
- Datasheet:
- TSM210N06CZ C0G
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0 pcs On sales
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Shipping Cost
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
Taiwan Semiconductor TSM210N06CZ C0G technical specifications, attributes, parameters and parts with similar specifications to Taiwan Semiconductor TSM210N06CZ C0G.
- Category
- Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
- Mfr
- Taiwan Semiconductor Corporation
- Package
- Tube
- Product Status
- Obsolete
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 60 V
- Current - Continuous Drain (Id) @ 25°C
- 210A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Rds On (Max) @ Id, Vgs
- 3.1mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 160 nC @ 10 V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 7900 pF @ 30 V
- Power Dissipation (Max)
- 250W (Tc)
- Temperature Range - Operating
- -55°C ~ 150°C (TJ)
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-220
- Package / Case
- TO-220-3
- MSL Level
- 1 (Unlimited)
- REACH Status
- REACH Unaffected
- ECCN
- EAR99
- HTSUS
- 8541.29.0095
- Fake Threat In the Open Market
- 73 pct.
Company Profile
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