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2SJ201-YF

Name: 2SJ201-YF
Brand: Toshiba Semiconductor and Storage
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

Transistors - FETs, MOSFETs - RF

Manufacturer No:: 2SJ201-YF
Manufacture:: Toshiba Semiconductor and Storage
Datasheet:: 2SJ201-YF
Description:: P-ch Power MOSFET/150W, -200V/-12A

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0 pcs On sales

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Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Toshiba Semiconductor and Storage 2SJ201-YF technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage 2SJ201-YF.

Continuous Drain Current (ID): 12 A
Drain to Source Breakdown Voltage: -200 V
Drain to Source Voltage (Vdss): 200 V
Element Configuration: Single
Gate to Source Voltage (Vgs): 20 V
Input Capacitance: 1.5 nF
Max Operating Temperature: 150 °C
Max Power Dissipation: 150 W
Min Operating Temperature: -55 °C
Mount: Through Hole
Number of Elements: 1
Number of Pins: 3
Packaging: Bulk
Power Dissipation: 150 W
Radiation Hardening: No
RoHS: Compliant
Categories: Transistors - FETs, MOSFETs - RF
Manufacturer: Toshiba Semiconductor and Storage
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited

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