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2SK4003(Q)

Name: 2SK4003(Q)
Brand: Toshiba Semiconductor and Storage
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

Transistors - FETs, MOSFETs - RF

Manufacturer No:: 2SK4003(Q)
Manufacture:: Toshiba Semiconductor and Storage
Datasheet:: 2SK4003(Q)
Description:: Trans MOSFET N-CH Si 600V 3A 3-Pin(3+Tab) PW-Mold2

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0 pcs On sales

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Delivery Time

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Product Attribute

Toshiba Semiconductor and Storage 2SK4003(Q) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage 2SK4003(Q).

Case / Package: TO-251-3
Continuous Drain Current (ID): 3 A
Drain to Source Resistance: 2.2 Ω
Drain to Source Voltage (Vdss): 600 V
Dual Supply Voltage: 600 V
Gate to Source Voltage (Vgs): 30 V
Height: 5.5 mm
Input Capacitance: 600 pF
Lead Free: Lead Free
Length: 6.5 mm
Max Operating Temperature: 150 °C
Max Power Dissipation: 20 W
Min Operating Temperature: -55 °C
Mount: Through Hole
Nominal Vgs: 4 V
Number of Elements: 1
Number of Pins: 3
Power Dissipation: 20 W
Rds On Max: 2.2 Ω
RoHS: Compliant
Termination: Through Hole
Width: 2.3 mm
Categories: Transistors - FETs, MOSFETs - RF
Manufacturer: Toshiba Semiconductor and Storage
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited

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