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GT10J312

IGBTs - Single

Manufacturer No:
GT10J312
Manufacture:
Toshiba Semiconductor and Storage
Datasheet:
GT10J312
Description:
IGBT 600V 10A 60W TO220SM

In Stock

6000 pcs On sales

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Delivery Time
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Product Attribute

Toshiba Semiconductor and Storage GT10J312 technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage GT10J312.

Categories
Discrete Semiconductor Products
Manufacturer
Toshiba Semiconductor and Storage
Packaging
Tube/Rail
Status
Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage
600V
Maximum Current Collector
10A
Pulsed Collector Current
20A
Collector-emitter saturation voltage(Max)
2.7V @ 15V, 10A
Maximum Power Dissipation
60W
Input Type
Standard
Turn-on and Turn-off delay time
400ns/400ns
Testing Conditions
300V, 10A, 100 Ohm, 15V
Reverse Recovery Time (trr)
200ns
Temperature Range - Operating
150°C (TJ)
Mounting
SMD (SMT)
Case / Package
TO-220SM
Popularity
Medium
Fake Threat In the Open Market
51 pct.
Supply and Demand Status
Limited

Company Profile

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