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HN2C01FEYTE85LF

Name: HN2C01FEYTE85LF
Brand: Toshiba Semiconductor and Storage
Price: 0.85 USD
Rating: 4.8 (6586 reviews)

Transistors (BJT) - Arrays

Manufacturer No:: HN2C01FEYTE85LF
Manufacture:: Toshiba Semiconductor and Storage
Datasheet:: HN2C01FEYTE85LF
Description:: TRANS 2NPN 50V 0.15A ES6

In Stock

4000 pcs On sales

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Delivery Time

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Product Attribute

Toshiba Semiconductor and Storage HN2C01FEYTE85LF technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage HN2C01FEYTE85LF.

Categories: Discrete Semiconductor Products
Manufacturer: Toshiba Semiconductor and Storage
Packaging: Reel - TR
Status: Obsolete(EOL)
Transistor Polarity: 2 NPN (Dual)
Maximum Current Collector: 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 10mA, 100mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 120 @ 2mA, 6V
Maximum Power Dissipation: 100mW
Frequency - Transition: 60MHz
Temperature Range - Operating: 150°C (TJ)
Mounting: SMD (SMT)
Case / Package: ES6
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

Company Profile

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