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HN3A51F(TE85L,F)

RF Transistors (BJT)

Manufacturer No:
HN3A51F(TE85L,F)
Manufacture:
Toshiba Semiconductor and Storage
Package:
SC-74, SOT-457
Datasheet:
HN3A51F(TE85L,F)
Description:
TRANS 2PNP 120V 0.1A SM6 / Bipolar (BJT) Transistor Array 2 PNP (Dual) 120V 100mA 100MHz 300mW Surface Mount SM6

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Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Toshiba Semiconductor and Storage HN3A51F(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage HN3A51F(TE85L,F).

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Mfr
Toshiba Semiconductor and Storage
Package
Tape & Reel
Product Status
Obsolete
Transistor Type
2 PNP (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
120V
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA, 6V
Power - Max
300mW
Frequency - Transition
100MHz
Temperature Range - Operating
150°C (TJ)
Mounting
SMD (SMT)
Package / Case
SC-74, SOT-457
Supplier Device Package
SM6
Base Product Number
HN3A51
MSL Level
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
HN3A51F(TE85LF)CT,HN3A51FTE85LF,HN3A51F(TE85LF)TR,HN3A51F (TE85L,F),HN3A51F(TE85LF)DKR
Standard Package
3,000
Fake Threat In the Open Market
65 pct.

Company Profile

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HN3A51F(TE85L,F) Relevant information

HN3A51F(TE85L,F)
HN3A51F(TE85L,F)

TRANS 2PNP 120V 0.1A SM6 / Bipolar (BJT) Transistor Array 2 PNP (Dual) 120V 100mA 100MHz 300mW Surface Mount SM6

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