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HN4A51JTE85LF

Transistors (BJT) - Arrays

Manufacturer No:
HN4A51JTE85LF
Manufacture:
Toshiba Semiconductor and Storage
Datasheet:
HN4A51JTE85LF
Description:
TRANS 2PNP 120V 0.1A SMV

In Stock

15600 pcs On sales

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Product Attribute

Toshiba Semiconductor and Storage HN4A51JTE85LF technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage HN4A51JTE85LF.

Categories
Discrete Semiconductor Products
Manufacturer
Toshiba Semiconductor and Storage
Packaging
Reel - TR
Status
Active
Transistor Polarity
2 PNP (Dual)
Maximum Current Collector
100mA
VCEO Maximum Collector-Emitter Breakdown Voltage
120V
Max Vce (sat)
300mV @ 1mA, 10mA
Collector Cut-off Current(Max)
100nA (ICBO)
Typical Gain (hFE) (Min)
200 @ 2mA, 6V
Maximum Power Dissipation
300mW
Frequency - Transition
100MHz
Temperature Range - Operating
150°C (TJ)
Mounting
SMD (SMT)
Case / Package
SMV
Popularity
Medium
Fake Threat In the Open Market
38 pct.
Supply and Demand Status
Balance

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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