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RN47A3JE(TE85L,F)

Name: RN47A3JE(TE85L,F)
Brand: Toshiba Semiconductor and Storage
Price: 12.05 USD
Rating: 4.8 (6586 reviews)

Transistors (BJT) - Arrays, Pre - Biased

Manufacturer No:: RN47A3JE(TE85L,F)
Manufacture:: Toshiba Semiconductor and Storage
Datasheet:: RN47A3JE(TE85L,F)
Description:: TRANS NPN/PNP PREBIAS 0.1W ESV

In Stock

13400 pcs On sales

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Toshiba Semiconductor and Storage RN47A3JE(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN47A3JE(TE85L,F).

Category: Discrete Semiconductor Products
Family: Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer: Toshiba Semiconductor and Storage
Packaging: Reel
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250μA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Style: SMD/SMT
Package: SOT-553
Manufacturer Device Package: ESV
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

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