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TDTC114E,LM
- Manufacturer No:
- TDTC114E,LM
- Manufacture:
- Toshiba Semiconductor and Storage
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
- TDTC114E,LM
- Description:
- TRANS PREBIAS NPN 50V 0.1A SOT23 / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 320 mW Surface Mount SOT-23-3
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Shipping Cost
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Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
Toshiba Semiconductor and Storage TDTC114E,LM technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage TDTC114E,LM.
- Category
- Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
- Mfr
- Toshiba Semiconductor and Storage
- Package
- Tape & Reel
- Transistor Type
- NPN - Pre-Biased
- Current - Collector (Ic) (Max)
- 100 mA
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- Resistor - Base (R1)
- 10 kOhms
- Resistor - Emitter Base (R2)
- 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)
- 500nA
- Frequency - Transition
- 250 MHz
- Power - Max
- 320 mW
- Mounting
- SMD (SMT)
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package
- SOT-23-3
- Base Product Number
- TDTC114
- MSL Level
- 1 (Unlimited)
- ECCN
- EAR99
- HTSUS
- 8541.21.0075
- Other Names
- TDTC114ELMCT,TDTC114E,LM(B,TDTC114ELMDKR,TDTC114ELMTR
- Standard Package
- 3,000
- Fake Threat In the Open Market
- 57 pct.
Company Profile
TDTC114E,LM Relevant information
TDTC114E,LM
TRANS PREBIAS NPN 50V 0.1A SOT23 / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 320 mW Surface Mount SOT-23-3