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TK22A10N1,S4X

Name: TK22A10N1,S4X
Brand: Toshiba Semiconductor and Storage
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

Transistors - FETs, MOSFETs - RF

Manufacturer No:: TK22A10N1,S4X
Manufacture:: Toshiba Semiconductor and Storage
Package:: TO-220-3 Full Pack
Datasheet:: TK22A10N1,S4X
Description:: MOSFET N-CH 100V 22A TO220SIS / N-Channel 100 V 22A (Tc) 30W (Tc) Through Hole TO-220SIS

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Toshiba Semiconductor and Storage TK22A10N1,S4X technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage TK22A10N1,S4X.

Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr: Toshiba Semiconductor and Storage
Series: U-MOSVIII-H
Package: Tube
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Power Dissipation (Max): 30W (Tc)
Temperature Range - Operating: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack
Base Product Number: TK22A10
MSL Level: 1 (Unlimited)
ECCN: EAR99
HTSUS: 8541.29.0095
Other Names: TK22A10N1S4X,TK22A10N1,S4X(S,TK22A10N1,S4X-ND
Standard Package: 50
Fake Threat In the Open Market: 50 pct.

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