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TPCC8002-H(TE12LQM

Name: TPCC8002-H(TE12LQM
Brand: Toshiba Semiconductor and Storage
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

Transistors - FETs, MOSFETs - RF

Manufacturer No:: TPCC8002-H(TE12LQM
Manufacture:: Toshiba Semiconductor and Storage
Package:: 8-VDFN Exposed Pad
Datasheet:: TPCC8002-H(TE12LQM
Description:: MOSFET N-CH 30V 22A 8TSON / N-Channel 30 V 22A (Ta) 700mW (Ta), 30W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)

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Delivery Time

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Product Attribute

Toshiba Semiconductor and Storage TPCC8002-H(TE12LQM technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage TPCC8002-H(TE12LQM.

Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr: Toshiba Semiconductor and Storage
Series: U-MOSV-H
Package: Tape & Reel
Product Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 10 V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Temperature Range - Operating: 150°C (TJ)
Mounting: SMD (SMT)
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Package / Case: 8-VDFN Exposed Pad
Base Product Number: TPCC8002
MSL Level: 1 (Unlimited)
ECCN: EAR99
HTSUS: 8541.29.0095
Other Names: TPCC8002-H(TE12LQMTR,TPCC8002-H(TE12LQMCT,TPCC8002HTE12LQM,TPCC8002-H(TE12LQMDKR
Standard Package: 3,000
Fake Threat In the Open Market: 53 pct.

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