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TPN5900CNH,L1Q

Transistors - FETs, MOSFETs - RF

Manufacturer No:
TPN5900CNH,L1Q
Manufacture:
Toshiba Semiconductor and Storage
Datasheet:
TPN5900CNH,L1Q
Description:
MOSFET N-CH 150V 9A 8TSON

In Stock

9000 pcs On sales

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Delivery Time
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Product Attribute

Toshiba Semiconductor and Storage TPN5900CNH,L1Q technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage TPN5900CNH,L1Q.

Categories
Discrete Semiconductor Products
Manufacturer
Toshiba Semiconductor and Storage
Packaging
Reel - TR
Status
Active
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
150V
Continuous Drain Current at 25°C
9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate-Source Threshold Voltage
4V @ 200μA
Max Gate Charge
7nC @ 10V
Max Input Capacitance
600pF @ 75V
Maximum Gate-Source Voltage
±20V
Power Dissipation (Max)
700mW (Ta), 39W (Tc)
Maximum Rds On at Id,Vgs
59 mOhm @ 4.5A, 10V
Temperature Range - Operating
150°C (TJ)
Mounting
SMD (SMT)
Case / Package
8-TSON Advance (3.3x3.3)
Dimension
8-PowerVDFN
Popularity
Medium
Fake Threat In the Open Market
46 pct.
Supply and Demand Status
Balance

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

TPN5900CNH,L1Q Relevant information

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