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TPN7R006PL,L1Q
- Manufacturer No:
- TPN7R006PL,L1Q
- Manufacture:
- Toshiba Semiconductor and Storage
- Package:
- 8-PowerVDFN
- Datasheet:
- TPN7R006PL,L1Q
- Description:
- MOSFET N-CH 60V 54A 8TSON / N-Channel 60 V 54A (Tc) 630mW (Ta), 75W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
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Shipping Cost
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
Toshiba Semiconductor and Storage TPN7R006PL,L1Q technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage TPN7R006PL,L1Q.
- Category
- Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
- Mfr
- Toshiba Semiconductor and Storage
- Series
- U-MOSIX-H
- Package
- Tape & Reel
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 60 V
- Current - Continuous Drain (Id) @ 25°C
- 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs
- 7mOhm @ 27A, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs
- 20 nC @ 10 V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 1875 pF @ 30 V
- Power Dissipation (Max)
- 630mW (Ta), 75W (Tc)
- Temperature Range - Operating
- 175°C
- Mounting
- SMD (SMT)
- Supplier Device Package
- 8-TSON Advance (3.1x3.1)
- Package / Case
- 8-PowerVDFN
- Base Product Number
- TPN7R006
- MSL Level
- 1 (Unlimited)
- ECCN
- EAR99
- HTSUS
- 8541.29.0095
- Other Names
- 264-TPN7R006PLL1QCT,264-TPN7R006PLL1QTR,TPN7R006PL,L1Q(M,264-TPN7R006PLL1QDKR
- Standard Package
- 5,000
- Fake Threat In the Open Market
- 55 pct.
Company Profile
TPN7R006PL,L1Q Relevant information
TPN7R006PL,L1Q
MOSFET N-CH 60V 54A 8TSON / N-Channel 60 V 54A (Tc) 630mW (Ta), 75W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
TPN7R504PL,LQ
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