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Toshiba Semiconductor and Storage TRS8A65F,S1Q technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage TRS8A65F,S1Q.
PB-F DIODE TO-220-2L V=650 IF=8A / Diode Silicon Carbide Schottky 650 V 8A (DC) Through Hole TO-220F-2L
DIODE SCHOTTKY 650V 8A TO220-2L
DODE SCHOTTKY 650V TO220 / Diode Silicon Carbide Schottky 650 V 8A (DC) Through Hole TO-220-2L