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UJ3C120150K3S
Transistors - FETs, MOSFETs - RF
- Manufacturer No:
- UJ3C120150K3S
- Manufacture:
- UnitedSiC
- Package:
- TO-247-3
- Datasheet:
- UJ3C120150K3S
In Stock
1890 pcs On sales
Purchase and inquiry
Purchase
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Means of Payment
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.RFQ (Request for Quotations)
It is recommended to request for quotations to get the latest prices and inventories about the part. Our sales will reply to your request by email within 24 hours.IMPORTANT NOTICE
1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.
Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.) The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.Shipping Method
Currently, our products are shipped through DHL, FedEx, SF, and UPS.Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
UnitedSiC UJ3C120150K3S technical specifications, attributes, parameters and parts with similar specifications to UnitedSiC UJ3C120150K3S.
- REACH Status
- REACH Unaffected
- ECCN
- EAR99
- HTSUS
- 8541.29.0095
- Fake Threat In the Open Market
- 52 pct.
- MSL Level
- Not Applicable
- Standard Package
- 30
- Other Names
- 2312-UJ3C120150K3S
- Base Product Number
- UJ3C120150
- Package / Case
- TO-247-3
- Supplier Device Package
- TO-247-3
- Mounting Type
- Through Hole
- Temperature Range - Operating
- -55°C ~ 175°C (TJ)
- Power Dissipation (Max)
- 166.7W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds
- 738 pF @ 100 V
- Vgs (Max)
- ±25V
- Gate Charge (Qg) (Max) @ Vgs
- 30 nC @ 15 V
- Vgs(th) (Max) @ Id
- 5.5V @ 10mA
- Rds On (Max) @ Id, Vgs
- 180mOhm @ 5A, 12V
- Drive Voltage (Max Rds On, Min Rds On)
- 12V
- Current - Continuous Drain (Id) @ 25°C
- 18.4A (Tc)
- Drain to Source Voltage (Vdss)
- 1200 V
- Technology
- SiCFET (Cascode SiCJFET)
- FET Type
- N-Channel
- Package
- Tube
- Mfr
- UnitedSiC
- Category
- Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
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