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SI1300BDL-T1-GE3

Transistors - FETs, MOSFETs - RF

Manufacturer No:
SI1300BDL-T1-GE3
Manufacture:
Vishay
Datasheet:
SI1300BDL-T1-GE3
Description:
MOSFET N-CH 20V 400MA SC-70-3

In Stock

284 pcs On sales

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Product Attribute

Vishay SI1300BDL-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay SI1300BDL-T1-GE3.

Categories
Discrete Semiconductor Products
Manufacturer
Vishay
Packaging
Reel - TR
Status
Obsolete(EOL)
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
20V
Continuous Drain Current at 25°C
400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Gate-Source Threshold Voltage
1V @ 250μA
Max Gate Charge
0.84nC @ 4.5V
Max Input Capacitance
35pF @ 10V
Maximum Gate-Source Voltage
±8V
Power Dissipation (Max)
190mW (Ta), 200mW (Tc)
Maximum Rds On at Id,Vgs
850 mOhm @ 250mA, 4.5V
Temperature Range - Operating
-55°C to 150°C (TJ)
Mounting
SMD (SMT)
Case / Package
SC-70-3
Dimension
SC-70, SOT-323
Popularity
Medium
Fake Threat In the Open Market
37 pct.
Supply and Demand Status
Sufficient

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

SI1300BDL-T1-GE3 Relevant information

SI1300BDL-T1-E3
SI1300BDL-T1-E3

Trans MOSFET N-CH 20V 0.4A 3-Pin SC-70 T/R / MOSFET N-CH 20V 400MA SOT323-3

SI1300BDL-T1-GE3
SI1300BDL-T1-GE3

MOSFET N-CH 20V 400MA SC-70-3

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