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SI2300DS-T1-GE3

Name: SI2300DS-T1-GE3
Brand: Vishay
Price: 9.95 USD
Rating: 4.8 (6586 reviews)

Transistors - FETs, MOSFETs - RF

Manufacturer No:: SI2300DS-T1-GE3
Manufacture:: Vishay
Datasheet:: SI2300DS-T1-GE3
Description:: Trans MOSFET N-CH 30V 3.1A 3-Pin SOT-23 T/R / MOSFET N-CH 30V 3.6A SOT-23

In Stock

30000 pcs On sales

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Shipping Cost

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Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Vishay SI2300DS-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay SI2300DS-T1-GE3.

Categories: Discrete Semiconductor Products
Manufacturer: Vishay
Packaging: Reel - TR
Status: Active
Polarity: N-Channel
Technology: MOSFET
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 320pF @ 15V
Maximum Gate-Source Voltage: ±12V
Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc)
Maximum Rds On at Id,Vgs: 68 mOhm @ 2.9A, 4.5V
Temperature Range - Operating: -55°C to 150°C (TJ)
Mounting: SMD (SMT)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Portable Devices
Family Name: Si2300DS
Introduction Date: January 26, 2010
ECCN: EAR99
Halogen Free: Compliant
Estimated EOL Date: 2027

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