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SI4500BDY-T1-E3

Transistors - FETs, MOSFETs - RF

Manufacturer No:
SI4500BDY-T1-E3
Manufacture:
Vishay
Datasheet:
SI4500BDY-T1-E3
Description:
MOSFET N/P-CH 20V 6.6A 8SOIC

In Stock

10360 pcs On sales

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Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Vishay SI4500BDY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay SI4500BDY-T1-E3.

Categories
Discrete Semiconductor Products
Manufacturer
Vishay
Packaging
Cut Reel
Status
Obsolete(EOL)
FET Type
N and P-Channel, Common Drain
FET Feature
Logic Level Gate
Drain-Source Breakdown Voltage
20V
Continuous Drain Current at 25°C
6.6A, 3.8A
Maximum Rds On at Id,Vgs
20 mOhm @ 9.1A, 4.5V
Gate-Source Threshold Voltage
1.5V @ 250μA
Max Gate Charge
17nC @ 4.5V
Maximum Power Dissipation
1.3W
Temperature Range - Operating
-55°C to 150°C (TJ)
Mounting
SMD (SMT)
Case / Package
8-SO
Is this a common-used part?
Yes
Popularity
High
Fake Threat In the Open Market
35 pct.
Supply and Demand Status
Limited
Application Field
Used in Power Management

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

SI4500BDY-T1-E3 Relevant information

SI4500BDY
SI4500BDY

Complementary MOSFET Half-Bridge (N- and P-Channel)

SI4500BDY-T1-E3
SI4500BDY-T1-E3

MOSFET N/P-CH 20V 6.6A 8SOIC

Si4500BDY-T1-GE3
Si4500BDY-T1-GE3

Complementary MOSFET Half-Bridge (N- and P-Channel)

SI4500DY
SI4500DY

Complementary MOSFET Half-Bridge (N- and P-Channel)

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