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SI5402BDC-T1-E3

Transistors - FETs, MOSFETs - RF

Manufacturer No:
SI5402BDC-T1-E3
Manufacture:
Vishay
Datasheet:
SI5402BDC-T1-E3
Description:
MOSFET N-CH 30V 4.9A 1206-8

In Stock

5440 pcs On sales

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Product Attribute

Vishay SI5402BDC-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay SI5402BDC-T1-E3.

Categories
Discrete Semiconductor Products
Manufacturer
Vishay
Packaging
Reel - TR
Status
Obsolete(EOL)
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
30V
Continuous Drain Current at 25°C
4.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Gate-Source Threshold Voltage
3V @ 250μA
Max Gate Charge
20nC @ 10V
Maximum Gate-Source Voltage
±20V
Power Dissipation (Max)
1.3W (Ta)
Maximum Rds On at Id,Vgs
35 mOhm @ 4.9A, 10V
Temperature Range - Operating
-55°C to 150°C (TJ)
Mounting
SMD (SMT)
Case / Package
1206-8 ChipFET
Dimension
8-SMD, Flat Lead
Popularity
Medium
Fake Threat In the Open Market
40 pct.
Supply and Demand Status
Balance

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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