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SI5445BDC-T1-GE3

FETs - Single

Manufacturer No:
SI5445BDC-T1-GE3
Manufacture:
Vishay
Datasheet:
SI5445BDC-T1-GE3
Description:
MOSFET P-CH 8V 5.2A 1206-8

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Product Attribute

Vishay SI5445BDC-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay SI5445BDC-T1-GE3.

Categories
Discrete Semiconductor Products
Manufacturer
Vishay Siliconix
Packaging
Tape and Reel
Status
Obsolete
Transistor Polarity
P-Channel
Technology
MOSFET
Vds - Drain-Source Breakdown Voltage
8V
Id - Continuous Drain Current
5.2A
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Maximum) at Id, Vgs
33mOhm at 5.2A, 4.5V
Gate Source Voltage(th) (Maximum) at Id
1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs
21nC at 4.5V
Gate Source Voltage (Maximum)
±8V
Power Dissipation (Maximum)
1.3W
Temperature Range - Operating
-55°C ~ 150°C
Mounting Style
SMD
Supplier Device Package
1206-8 ChipFET
Manufacturer Package
8-SMD, Flat Lead
Manufacturer Pack Quantity
3,000
MSL Level
1 (Unlimited)
Popularity
Low
Fake Threat In the Open Market
46 pct.
Supply and Demand Status
Limited

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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