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SI5902BDC-T1-GE3

Name: SI5902BDC-T1-GE3
Brand: Vishay
Price: 6.19 USD
Rating: 4.8 (6586 reviews)

Transistors - FETs, MOSFETs - RF

Manufacturer No:: SI5902BDC-T1-GE3
Manufacture:: Vishay
Datasheet:: SI5902BDC-T1-GE3
Description:: MOSFET 2N-CH 30V 4A 1206-8

In Stock

27000 pcs On sales

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Shipping Cost

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Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Vishay SI5902BDC-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay SI5902BDC-T1-GE3.

Categories: Discrete Semiconductor Products
Manufacturer: Vishay
Packaging: Reel - TR
Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4A
Maximum Rds On at Id,Vgs: 65 mOhm @ 3.1A, 10V
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 7nC @ 10V
Max Input Capacitance: 220pF @ 15V
Maximum Power Dissipation: 3.12W
Temperature Range - Operating: -55°C to 150°C (TJ)
Mounting: SMD (SMT)
Case / Package: 1206-8 ChipFET
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

Company Profile

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