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SI6913DQ-T1-GE3

Transistors - FETs, MOSFETs - RF

Manufacturer No:
SI6913DQ-T1-GE3
Manufacture:
Vishay
Datasheet:
SI6913DQ-T1-GE3
Description:
Trans MOSFET P-CH 12V 4.9A 8-Pin TSSOP T/R / MOSFET 2P-CH 12V 4.9A 8-TSSOP

In Stock

6000 pcs On sales

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Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Vishay SI6913DQ-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay SI6913DQ-T1-GE3.

Categories
Discrete Semiconductor Products
Manufacturer
Vishay
Packaging
Reel - TR
Status
Active
FET Type
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain-Source Breakdown Voltage
12V
Continuous Drain Current at 25°C
4.9A
Maximum Rds On at Id,Vgs
21 mOhm @ 5.8A, 4.5V
Gate-Source Threshold Voltage
900mV @ 400μA
Max Gate Charge
28nC @ 4.5V
Maximum Power Dissipation
830mW
Temperature Range - Operating
-55°C to 150°C (TJ)
Mounting
SMD (SMT)
Case / Package
8-TSSOP
Is this a common-used part?
Yes
Popularity
High
Fake Threat In the Open Market
68 pct.
Supply and Demand Status
Balance
Family Name
Si6913DQ
Introduction Date
September 10, 2003
ECCN
EAR99
Country of Origin
China
Halogen Free
Compliant
Estimated EOL Date
2027

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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