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SI7101DN-T1-GE3

Transistors - FETs, MOSFETs - RF

Manufacturer No:
SI7101DN-T1-GE3
Manufacture:
Vishay
Datasheet:
SI7101DN-T1-GE3
Description:
MOSFET P-CH 30V 35A PPAK 1212-8

In Stock

2800 pcs On sales

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Delivery Time
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Product Attribute

Vishay SI7101DN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay SI7101DN-T1-GE3.

Categories
Discrete Semiconductor Products
Manufacturer
Vishay
Series
TrenchFET
Packaging
Reel - TR
Channel Type Type
P
Technology
MOSFET
Drain Source Voltage
30V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs(th) (Maximum) @ Id
2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs
102nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds
3595pF @ 15V
Vgs (Maximum)
±25V
Power Dissipation (Maximum)
3.7W (Ta), 52W (Tc)
Rds On (Maximum) @ Id, Vgs
7.2 mOhm @ 15A, 10V
Operating Temperature Range
-55°C ~ 150°C (TJ)
Mounting
SMD
Manufacturer Package
PowerPAK 1212-8
Package
PowerPAK 1212-8
Manufacturer Homepage
www.vishay.com
Popularity
Medium
Fake Threat In the Open Market
29 pct.
Supply and Demand Status
Balance
Quantity per package
3k pcs
Family Name
Si7101DN
Introduction Date
April 21, 2013
ECCN
EAR99
Country of Origin
China
Halogen Free
Compliant
Estimated EOL Date
2026

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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