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SI7613DN-T1-GE3

Name: SI7613DN-T1-GE3
Brand: Vishay
Price: 9.95 USD
Rating: 4.8 (6586 reviews)

Transistors - FETs, MOSFETs - RF

Manufacturer No:: SI7613DN-T1-GE3
Manufacture:: Vishay
Datasheet:: SI7613DN-T1-GE3
Description:: MOSFET P-CH 20V 35A 1212-8 PPAK

In Stock

17700 pcs On sales

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Shipping Cost

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Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Vishay SI7613DN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay SI7613DN-T1-GE3.

Categories: Discrete Semiconductor Products
Manufacturer: Vishay
Packaging: Reel - TR
Status: Active
Polarity: P-Channel
Technology: MOSFET
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 87nC @ 10V
Max Input Capacitance: 2620pF @ 10V
Maximum Gate-Source Voltage: ±16V
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Maximum Rds On at Id,Vgs: 8.7 mOhm @ 17A, 10V
Temperature Range - Operating: -50°C to 150°C (TJ)
Mounting: SMD (SMT)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited

Company Profile

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