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SI7900AEDN-T1-GE3
Transistors - FETs, MOSFETs - RF
- Manufacturer No:
- SI7900AEDN-T1-GE3
- Manufacture:
- Vishay
- Datasheet:
- SI7900AEDN-T1-GE3
- Description:
- MOSFET 2N-CH 20V 6A PPAK 1212-8
In Stock
2460 pcs On sales
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Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.) The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.Shipping Method
Currently, our products are shipped through DHL, FedEx, SF, and UPS.Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
Vishay SI7900AEDN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay SI7900AEDN-T1-GE3.
- Categories
- Discrete Semiconductor Products
- Manufacturer
- Vishay
- Packaging
- Reel - TR
- Status
- Active
- FET Type
- 2 N-Channel (Dual) Common Drain
- FET Feature
- Logic Level Gate
- Drain-Source Breakdown Voltage
- 20V
- Continuous Drain Current at 25°C
- 6A
- Maximum Rds On at Id,Vgs
- 26 mOhm @ 8.5A, 4.5V
- Gate-Source Threshold Voltage
- 900mV @ 250μA
- Max Gate Charge
- 16nC @ 4.5V
- Maximum Power Dissipation
- 1.5W
- Temperature Range - Operating
- -55°C to 150°C (TJ)
- Mounting
- SMD (SMT)
- Case / Package
- PowerPAK 1212-8 Dual
- Popularity
- Medium
- Fake Threat In the Open Market
- 31 pct.
- Supply and Demand Status
- Balance
Company Profile
SI7900AEDN-T1-GE3 Relevant information
SI7900AEDN
Dual N-Channel 20-V (D-S) MOSFET, Common Drain
SI7900AEDN-T1
Dual N-Channel 20-V (D-S) MOSFET, Common Drain
SI7900AEDN-T1-E3
MOSFET 2N-CH 20V 6A 1212-8
SI7900AEDN-T1-GE3
MOSFET 2N-CH 20V 6A PPAK 1212-8
SI7900EDN
Dual N-Channel 20-V (D-S) MOSFET, Common Drain
