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SI7964DP-T1-GE3

FETs - Arrays

Manufacturer No:
SI7964DP-T1-GE3
Manufacture:
Vishay
Datasheet:
SI7964DP-T1-GE3
Description:
MOSFET 2N-CH 60V 6.1A PPAK SO-8

In Stock

8000 pcs On sales

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Product Attribute

Vishay SI7964DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay SI7964DP-T1-GE3.

Categories
Discrete Semiconductor Products
Manufacturer
Vishay Siliconix
Packaging
Tape and Reel
Status
Obsolete
Transistor Polarity
2 N-Channel (Dual)
FET Feature
Standard
Vds - Drain-Source Breakdown Voltage
60V
Id - Continuous Drain Current
6.1A
Rds On (Maximum) at Id, Vgs
23mOhm at 9.6A, 10V
Gate Source Voltage(th) (Maximum) at Id
4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs
65nC at 10V
Maximum Power
1.4W
Temperature Range - Operating
-55°C ~ 150°C
Mounting Style
SMD
Manufacturer Package
PowerPAK SO-8 Dual
Supplier Device Package
PowerPAK SO-8 Dual
Family Part Number
SI7964
Manufacturer Pack Quantity
3,000
MSL Level
1 (Unlimited)
Popularity
Low
Fake Threat In the Open Market
32 pct.
Supply and Demand Status
Limited

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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