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SI8809EDB-T2-E1

Name: SI8809EDB-T2-E1
Brand: Vishay
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

Transistors - FETs, MOSFETs - RF

Manufacturer No:: SI8809EDB-T2-E1
Manufacture:: Vishay
Package:: 4-XFBGA
Datasheet:: SI8809EDB-T2-E1
Description:: MOSFET P-CH 20V 1.9A MICROFOOT / P-Channel 20 V 1.94 (Ta) 500mW (Ta) Surface Mount 4-Microfoot

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0 pcs On sales

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Shipping Cost

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Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Vishay SI8809EDB-T2-E1 technical specifications, attributes, parameters and parts with similar specifications to Vishay SI8809EDB-T2-E1.

Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr: Vishay Siliconix
Series: TrenchFET®
Package: Tape & Reel (TR)
Product Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 1.94 (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 8 V
Vgs (Max): ±8V
Power Dissipation (Max): 500mW (Ta)
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Mounting: SMD (SMT)
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA
Base Product Number: SI8809
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
ECCN: EAR99
HTSUS: 8541.21.0095
Standard Package: 3,000
Fake Threat In the Open Market: 61 pct.

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