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SIHP11N80AE-GE3

Name: SIHP11N80AE-GE3
Brand: Vishay
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

Transistors - FETs, MOSFETs - RF

Manufacturer No:: SIHP11N80AE-GE3
Manufacture:: Vishay
Package:: TO-220-3
Datasheet:: SIHP11N80AE-GE3

In Stock

0 pcs On sales

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Shipping Cost

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Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Vishay SIHP11N80AE-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay SIHP11N80AE-GE3.

Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr: Vishay Siliconix
Series: E
Package: Tube
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V
Power Dissipation (Max): 78W (Tc)
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Base Product Number: SIHP11
Other Names: ,742-SIHP11N80AE-GE3CT,742-SIHP11N80AE-GE3TR,742-SIHP11N80AE-GE3DKR,742-SIHP11N80AE-GE3TR,742-SIHP11N80AE-GE3CT,742-SIHP11N80AE-GE3DKR,742-SIHP11N80AE-GE3
Standard Package: 50
MSL Level: 1 (Unlimited)
ECCN: EAR99
HTSUS: 8541.29.0095
Fake Threat In the Open Market: 57 pct.

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