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SIR402DP-T1-E3

Name: SIR402DP-T1-E3
Brand: Vishay
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

Transistors - FETs, MOSFETs - RF

Manufacturer No:: SIR402DP-T1-E3
Manufacture:: Vishay
Datasheet:: SIR402DP-T1-E3
Description:: MOSFET, N, SO-8; Transistor Type: MOSFET; Transistor Polarity: N; Typ Voltage Vds: 30V; Current, Id Cont: 35A; On...

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0 pcs On sales

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Vishay SIR402DP-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay SIR402DP-T1-E3.

Continuous Drain Current (ID): 35 A
Drain to Source Resistance: 6 mΩ
Drain to Source Voltage (Vdss): 30 V
Maximum Operating Temperature: 150 °C
Max Power Dissipation: 4.2 W
Min Operating Temperature: -55 °C
Nominal Vgs: 1.15 V
Number of Pins: 8
Packaging: Cut Tape
Power Dissipation: 4.2 W
REACH SVHC: Unknown
Resistance: 6 mΩ
Rise Time: 20 ns
RoHS: Compliant
Threshold Voltage: 1.15 V
Categories: Transistors - FETs, MOSFETs - RF
Manufacturer: Vishay
Popularity: Low
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Shortage

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