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SIS402DN-T1-GE3

Transistors - FETs, MOSFETs - RF

Manufacturer No:
SIS402DN-T1-GE3
Manufacture:
Vishay
Datasheet:
SIS402DN-T1-GE3
Description:
MOSFET N-CH 30V 35A 1212-8

In Stock

15932 pcs On sales

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Shipping Cost
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Shipping Method
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Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Vishay SIS402DN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay SIS402DN-T1-GE3.

Categories
Discrete Semiconductor Products
Manufacturer
Vishay
Packaging
Reel - TR
Status
Active
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
30V
Continuous Drain Current at 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Gate-Source Threshold Voltage
2.2V @ 250μA
Max Gate Charge
42nC @ 10V
Max Input Capacitance
1700pF @ 15V
Maximum Gate-Source Voltage
±20V
Power Dissipation (Max)
3.8W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs
6 mOhm @ 19A, 10V
Temperature Range - Operating
-55°C to 150°C (TJ)
Mounting
SMD (SMT)
Case / Package
PowerPAK 1212-8
Dimension
PowerPAK 1212-8
Is this a common-used part?
Yes
Popularity
High
Fake Threat In the Open Market
46 pct.
Supply and Demand Status
Sufficient

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

SIS402DN-T1-GE3 Relevant information

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